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Home > Technology > Light Generation > EPISTAR LAB Launched a New Platform to Achieve 3.0V White LED Chip at 1A Operation
Technology | Light Generation | Oct 18, 2011

EPISTAR LAB Launched a New Platform to Achieve 3.0V White LED Chip at 1A Operation

EPISTAR LAB has developed a technology suitable for lighting applications to reach high efficacy by a single chip in size of 55mil for white LED to ease the complicated packaging of wire bonding. This technology enables a white LED with a lower voltage down to 3.0V at 1A operation and junction temperature of 85°C (3.2V at room temperature).
Comparison of voltage to current and luminous flux to current between the new FOC chip structure and a conventional chip Comparison of voltage to current and luminous flux to current between the new FOC chip structure and a conventional chip

With a correlated color temperature (CCT) of 5000 K, the LED achieves 175 lumens at 350mA. To reach such high efficacy in lighting applications, EPISTAR LAB developed FOC structure having a fan-out pad to significantly improve current spreading and thermal conduction. Consequently, much lower forward voltage, higher flux, and excellent flux saturation are achieved at high current operation as compared to normal power chip. Packages of FOC chips can be used in general lighting and any applications for high-efficacy white light.

About Epistar:
Epistar Corporation, headquartered in the Hsinchu Science-based Industrial Park, Taiwan since September 1996, focuses on developing, manufacturing and marketing high brightness Light Emitting Diode (LED) products. Applying its own proprietary Metal Organic Vapor Phase Epitaxy (MOVPE) technology, Epistar has successfully commercialized the full spectrum range of high brightness LEDs with the characteristics of compact size, low power consumption and long operation lifetime. For further information, please visit: http://www.epistar.com.tw/news-e.htm

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