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Home > Business > Company News > Lattice Power Joined Force with ShineOn to Develop HB GaN-on-Silicon LED Device
Business News | Jun 14, 2011

Lattice Power Joined Force with ShineOn to Develop HB GaN-on-Silicon LED Device

Lattice Power Corp. has joined force with ShineOn Inc.to demonstrate the world's first high-brightness LED product based on GaN-on-Si technology.

Combining the LP1000 chip which is a thin-film vertical structure device built entirely on Lattice Power's proprietary GaN-on-Silicon technology and ShineOn's MOZ3535, a compact ceramic packaging platform with low thermal impedance and superior optical performance, the GaN-on-Si based high-brightness LED device can take 350–1000mA current input and deliver more than 100-lumen light output at 350mA, or more than 200 lumens when over-driven.

The new product aims at general lighting applications and suits for indoor lighting, incandescent replacement bulb, flashlight and even direct-lit LCD backlighting applications.

At present, it is in the sampling stage and volume orders will be available in the fourth quarter of this year.

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