LEDs & OLEDs

Technology | May 11, 2011
Osram Applies “Brilliant-Mix” LED Concept to Parathom Pro Classic A 80 LED Lamp and PrevaLED System
Osram Applies “Brilliant-Mix” LED Concept to Parathom Pro Classic A 80 LED Lamp and PrevaLED System Warm white light with a high luminous efficacy (110 lm/W) and a color rendering index (CRI) of more than 90 are the result of the new “Brilliant-Mix” concept from OSRAM Opto Semiconductors. The intelligent color mix based on powerful Oslon SSL LEDs in EQ-White and Amber covers a broad white spectrum from 2700 to 4000 K. Depending on the required luminous flux, a different number of these LEDs can be combined to produce warm white feel-good light of high quality that will set new standards in general illumination applications. Read more »
Technology | Jun 16, 2011
OLED: Record-Breaking Efficiency News from Osram - 87lm/W
OLED: Record-Breaking Efficiency News from Osram - 87lm/W Technological breakthrough at OSRAM: researchers and developers have achieved a new efficiency record in the laboratory for OLED. The laboratory sample achieves 87 lm/W, significantly exceeding the current peak value. And the most important thing: the laboratory sample is highly proximate to the product, thus paving the way for highly energy-efficient OLED products with considerably higher brightness. Read more »
Technology | Jun 22, 2011
Researcher from the University of Miami Helps Create a Smaller, Flexible LED
University of Miami professor at the College of Engineering, Jizhou Song, has helped design an light-emitting diode (LED) light that uses an array of LEDs 100 times smaller than conventional LEDs. The new device has flexibility, maintains lower temperature and has an increased life-span over existing LEDs. The findings are published online by the "Proceedings of the National Academy of Sciences." Read more »
Technology | Jul 12, 2011
RoseStreet Labs Scientists Demonstrate First Long Wavelength LED Based on InGaN On Silicon Technology
RoseStreet Labs Scientists Demonstrate First Long Wavelength LED Based on InGaN On Silicon Technology RoseStreet Labs, (RSL), announced today the world’s first demonstration of a long wavelength LED device utilizing low cost silicon wafer substrates. Green and longer wavelength LEDs have been sought after by both science and industry for an extensive period of time because they would fill a high-value gap in the rapidly growing global LED market for lighting and illumination where energy efficiency, low cost and miniaturization are critical product characteristics. Read more »
Technology | Jul 26, 2011
New 3-D Photonic Crystal has both Electronic and Optical Properties
New 3-D Photonic Crystal has both Electronic and Optical Properties In an advance that could open new avenues for solar cells, lasers, metamaterials and more, researchers at the University of Illinois have demonstrated the first optoelectronically active 3-D photonic crystal. To test their technique, the group built a 3-D photonic crystal LED the first such working device. Read more »
Technology | Aug 02, 2011
Cree Prototype Exceeds DOE’s 21st Century Lamp L Prize Requirements
Cree Prototype Exceeds DOE’s 21st Century Lamp L Prize Requirements Demonstrating the future of lighting, Cree, Inc. today unveiled a concept LED light bulb from its lighting research and development team. Redefining what is possible with high-performance LED lighting, the lamp delivers more than 1,300 lumens at 152 lumens per watt (LPW) using Cree TrueWhite® Technology. Cree’s prototype LED light bulb exceeds the performance goals set by the U.S. Department of Energy (DOE) for the 21st Century Lamp, the third category in its L Prize competition. Read more »
Technology | Aug 10, 2011
BRIDGELUX Boost Efficiency Record for GaN-on-Silicon Technology LEDs to 160lm/W
BRIDGELUX Boost Efficiency Record for GaN-on-Silicon Technology LEDs to 160lm/W Bridgelux Inc., a leading developer and manufacturer of LED lighting technologies and solutions, has shattered its previous industry record for highest Lumen per Watt values for Gallium Nitride on Silicon (GaN-on-Si). Using its proprietary buffer layer technology, the company has demonstrated growth of crack-free GaN layers on 8-inch silicon wafers, without bowing at room temperature, extending the company’s lead in driving the performance and manufacturability of GaN LEDs on silicon substrate. Read more »
Technology | Oct 17, 2011
609 nm Red LED Prototype from OSRAM Opto Semiconductors Achieves Record Efficiency
609 nm Red LED Prototype from OSRAM Opto Semiconductors Achieves Record Efficiency A red high-power LED has set a new efficiency record in an OSRAM Opto Semiconductors R&D lab with an electro-optical efficiency of 61%. The 1 mm2 chip housed on a laboratory package emits at a wavelength of 609 nm (λ-dom) and has achieved a record value of 201 lm/W at an operating current of 40 mA. At a typical operating current of 350 mA its luminous efficacy is still an impressive 168 lm/W, which means that even at this high wattage more than half of the electrical energy is converted into light. Read more »
Technology | Oct 27, 2011
Competing LEDs: High-quality White Light Produced by Four-Color Laser Source
Competing LEDs: High-quality White Light Produced by Four-Color Laser Source The human eye is as comfortable with white light generated by diode lasers as with that produced by increasingly popular light-emitting diodes (LEDs), according to tests conceived at Sandia National Laboratories. Both technologies pass electrical current through material to generate light, but the simpler LED emits lights only through spontaneous emission. Diode lasers bounce light back and forth internally before releasing it. Read more »
Technology | Nov 10, 2011
Los Alamos Researchers Unravel the Mystery of Quantum Dot Blinking
Los Alamos Researchers Unravel the Mystery of Quantum Dot Blinking Research by Los Alamos scientists published today in the journal Nature documents significant progress in understanding the phenomenon of quantum-dot blinking. Their findings should enhance the ability of biologists to track single particles, enable technologists to create novel light-emitting diodes and single-photon sources, and boost efforts of energy researchers to develop new types of highly efficient solar cells. Read more »
White Paper | Technology | Dec 15, 2011
Independent Study Demonstrating that Pink Sapphire Produces Highest Transmission Colorless Epi-Wafers
Independent Study Demonstrating that Pink Sapphire Produces Highest Transmission Colorless Epi-Wafers GT Advanced Technologies Inc. announced the release of a case study that details the findings of a series of blind material studies conducted to evaluate the impact of sapphire color on the LED manufacturing process. The studies demonstrated that all sapphire, regardless of source, exhibits color at the core level, that the pink hue of GT Advanced Sapphire Furnace (ASF™) material is not indicative of impurities, and that pink ASF sapphire does not have an adverse affect on the LED manufacturing process nor does it require extra steps or incremental costs to remove the pink hue. In addition, it was demonstrated that GT ASF pink sapphire material makes the lowest absorption, highest transmission epi-wafers of the samples examined. Read more »
Technology | Dec 23, 2011
New Developed Technique Makes it Easier To Etch Semiconductors - Especially III-V Semiconductors
New Developed Technique Makes it Easier To Etch Semiconductors - Especially III-V Semiconductors Creating semiconductor structures for high-end optoelectronic devices just got easier, thanks to University of Illinois researchers. The team developed a method to chemically etch patterned arrays in the semiconductor gallium arsenide, used in solar cells, lasers, light emitting diodes (LEDs), field effect transistors (FETs), capacitors and sensors. Led by electrical and computer engineering professor Xiuling Li, the researchers describe their technique in the journal Nano Letters. Read more »
White Paper | Technology | Jan 13, 2012
Success in Research: First Gallium-Nitride LED Chips on Silicon in Pilot Stage
Success in Research: First Gallium-Nitride LED Chips on Silicon in Pilot Stage Researchers at Osram Opto Semiconductors have succeeded in manufacturing highperformance prototypes of blue and white LEDs, in which the light-emitting gallium-nitride layers are grown on silicon wafers with a diameter of 150 millimeters. The silicon replaces the sapphire commonly used until now without a loss in quality. Already in the pilot stage, the new LED chips are to be tested under practical conditions, meaning that the first LEDs on silicon from Osram Opto Semiconductors could hit the market in just two years. Read more »
Technology | Jan 31, 2012
Removing Impurities from QDs Made by Cation-Exchange Techniques May Lead to Affordable QD-Products
Removing Impurities from QDs Made by Cation-Exchange Techniques May Lead to Affordable QD-Products To the lengthy list of serendipitous discoveries – gravity, penicillin, the New World – add this: Scientists with the U.S. Department of Energy (DOE)’s Lawrence Berkeley National Laboratory (Berkeley Lab) have discovered why a promising technique for making quantum dots and nanorods has so far been a disappointment. Better still, they’ve also discovered how to correct the problem. Read more »
Technology | Feb 10, 2012
IM³OLED Project to Develop Multiscale OLED Modeling Tool
IM³OLED Project to Develop Multiscale OLED Modeling Tool The EU-funded IM³OLED (Integrated Multidisciplinary & Multiscale Modeling for Organic Light-Emitting Diodes) project - coordinated by Holst Centre and the Russian National Research Nuclear University MEPhI - has officially been launched. An international collaboration with the Russian Federation, the project aims to develop a software tool for multiscale OLED modeling. Such a tool would help the OLED industry escape today’s “trial-and-error” development and accelerate towards the goal of 150 lumens per Watt devices. Read more »
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