White Paper | Technology | Sep 11, 2012

SMART-Project Aims to Develop Logic and Light on a Chip Using GaN-on-Si Technology

The research project Low Energy Electronics Systems (LEES) has started its work with a kick-off meeting. The program’s initiator is the renowned Singapore MIT Alliance for Research and Technology (SMART) Center based in Singapore. The LEES team consists of eminent research and science specialists and is targeting the development of cuttingedge technology to increase energy efficiency and advance high-tech industries that complement microelectronics. Two AIXTRON CRIUS® 1x200 mm systems, which the project managers ordered early this year, will form the technological foundation basis for the LEES project work. They will be available for use in the project from the fourth quarter of 2012. Read more »

Fundings + Projects | White Paper | Aug 01, 2012

Researchers Study How to Avoid Charge Traps in Plastic Electronics

Visualization of an electron traveling through a potential field with charge traps in plastic electronics. (Click image for high-resolution version. Credit: Gert-Jan Wetzelaer, University of Groningen) Plastic electronics hold the promise of cheap, mass-produced devices. But plastic semiconductors have an important flaw: the electronic current is influenced by “charge traps” in the material. These traps, which have a negative impact on plastic light-emitting diodes and solar cells, are poorly understood. Read more »

White Paper | Technology | Jul 31, 2012

Cree Announces 170 Lumen-Per-Watt LED Light Bulb Demonstrator

Less than one year after showcasing the 152 lumens-per-watt concept LED bulb, Cree, Inc. (Nasdaq: CREE) delivers a new performance benchmark with the 170 lumens-per-watt (LPW) prototype LED light bulb. The innovations behind the high-performance 170 LPW LED bulb are enabling significantly higher efficacy and lower cost for Cree’s luminaire portfolio and demonstrate Cree’s continued commitment to accelerate the adoption of LED lighting by addressing initial cost and payback – key barriers to widespread LED lighting adoption. Read more »

Fundings + Projects | Jul 13, 2012

Utah Physicists Invent ‘Spintronic’ LED

A new “spintronic” organic light-emitting diode glows orangish (center) when the device, chilled well below freezing, is exposed to a magnetic field from the two poles of an electromagnet located on either side of the device. University of Utah physicists report inventing the new kind of LED in the July 13 issue of the journal Science (Photo Credit: Tho Nguyen, University of Utah) University of Utah physicists invented a new “spintronic” organic light-emitting diode or OLED that promises to be brighter, cheaper and more environmentally friendly than the kinds of LEDs now used in television and computer displays, lighting, traffic lights and numerous electronic devices. Read more »

Technology | Jul 07, 2012

LED System Design with Cititzen LEDs (by A. Lohrer, Endrich)

Albrecht Lohrer Rapid improvements in high-power LEDs are opening up more and more application possibilities. These go beyond the simple replacement of the light bulb: thanks to fast technology advancements creative lighting solutions such as object illumination that were unthinkable a few years ago are now possible (see Figure - Illuminated Bridge). Recent price trends have resulted in many large lighting companies now exclusively using LEDs as light sources for new developments. Read more »

Technology | May 11, 2012

Bridgelux and Toshiba Achieve World Class Performance for 8″ GaN-On-Silicon LEDs

An optimized epitaxy process on 8-inch Si wafers will make LED manufacturing compatible with existing automated semiconductor lines Bridgelux, a leading developer and promoter of LED lighting technologies and solutions, and Toshiba Corporation, a world-leading semiconductor manufacturer, today announced that Bridgelux and Toshiba have achieved the industry’s top class 8” GaN on Silicon LED chip emitting 614mW, <3.1V@350mA with 1.1mm square chip, just months after they have engaged in a joint collaborative agreement this year. Bridgelux and Toshiba will further accelerate their development efforts for LED chips, which have seen increasing demand for LCD panels and lightening systems world wide. Read more »

Technology | May 09, 2012

NGK Developed GaN Wafer for Ultra High Brightness LEDs

NGK's GaN wafers promise improved internal quantum efficiency - small image shows LED element under light emitting test (Substrate size: 1cm square, Element size: 0.3mm square, Injection current: approx. 200mA, Center wavelength: 450nm) NGK Insulators has announced it has developed gallium nitride (GaN) wafers that double luminous efficiency of a LED light source compared to conventional materials. Created with original liquid phase epitaxial growth technology, NGK's GaN wafer has low defect density and colorless transparency over the whole wafer surface. Read more »

Technology | May 08, 2012

GT Advanced Technologies Releases Findings of Latest Case Study on Impact of Sapphire Material on HB LED Manufacturing

Polarized light images of different levels of crystal distortion (out of the "GT Advanced Technologies’ Characterization of Sapphire Material Project") GT Advanced Technologies will host a LED manufacturing symposium in Shanghai, China, May 9-10, 2012. The event will bring together a wide range of manufacturers from the LED value chain throughout Asia, from sapphire crystal growers to epi-wafer and LED device producers, to discuss the metrics that matter most in producing high yielding and high quality LEDs. Particular focus will be on the role that high quality sapphire material plays in driving downstream yield improvements and costs reductions. Presenters include representatives from Philips Lumileds, Arima Optoelectronics, Yole Developpement, KLA Tencor, Meyer Berger and GT. Read more »

Technology | May 03, 2012

Strategy Analytics Study Predicts that LED Manufacturers are Considering Gallium Nitride on Silicon

As the LED market faces the challenges of softening demand, reduced government subsidies and rapidly declining pricing, manufacturers must investigate new techniques to improve cost structure. Most of the LEDs currently produced use a Gallium Nitride (GaN)-on-sapphire manufacturing process. The Strategy Analytics GaAs and Compound Semiconductor Technologies Service (GaAs) viewpoint, “Compound Semiconductor Industry Review February 2012: Optoelectronics, Materials and Equipment,” provides details of two companies that have purchased equipment from Veeco Instruments to develop less costly GaN-on-silicon fabrication processes, SemiLEDS and Epistar. The report also captures announcements for companies such as Soitec, AIXTRON, AXT, Hitachi Cable, JDSU, Sharp, Furukawa, Finisar, Oclaro, Emcore, GigOptix, IQE and Avago Technologies. Read more »

Technology | May 02, 2012

Low Efficiency Droop LED - Overcoming the Mysterious Phenomenon Could Lead to Affordable LED Lighting

Schematic of the transparent low droop LED packaging design (left) and a working blue LED using the design (right) Like a coffee enthusiast who struggles to get a buzz from that third cup of morning joe, light-emitting diodes (LEDs) seem to reach a point where more electricity no longer imparts the same kick and productivity levels-off. Now a team of researchers from California and Japan has devised a new design for green and blue LEDs that avoids much of this vexing efficiency droop. The findings will be presented at the Conference on Lasers and Electro-Optics (CLEO: 2012), taking place May 6-11 in San Jose, Calif. Read more »

News-Spot | Technology | Apr 25, 2012

Philips Develops Technology to Reduce Dependence on Rare Earths for LEDs

Rare earths are dispersed and not often found in concentrated and economically exploitable forms Rare earths are one of the basic elements of modern electronics. They are indispensable for producing LEDs. Since there is a growing demand and restricted quotas, the urgently needed decline of LED prices could be slowed down. Hence Philips has kicked off working on a technology that will significantly reduce its dependence on rare earth minerals for its LED lighting products. Read more »

Technology | Apr 13, 2012

On Time, Immediately before Light+Building, Cree Comes Up with a New R&D Performance Record of 254 Lumen-Per-Watt

Elements of Cree’s innovative SC³ Technology Platform allowed the new performance record LED lighting leader Cree, Inc. delivers another industry first with a barrier-breaking 254 lumen-per-watt white R&D power LED. This significant milestone exceeds Cree’s previous R&D industry record of 231 lumens per watt and demonstrates Cree’s continued commitment to accelerate the adoption of LED lighting. Read more »

White Paper | Technology | Mar 07, 2012

Flexible Organic LED (OLED) Lighting Reaches High Energy Efficiency

Solvay, Holst Centre and several other partners demonstrate flexible 69cm² Organic LED (OLED) lighting tiles with an efficiency of 30 lm/Watt Chemical group Solvay and Holst Centre have demonstrated high efficiency flexible Organic Light Emitting Diodes (OLED) lighting tiles with a surface area of 69cm². These large-area demonstrators contain several layers deposited by solution processing at Holst Centre and additional layers applied by conventional vacuum deposition at Solvay. Read more »

White Paper | Technology | Mar 06, 2012

At High Environmental Temperatures and at Very Low Power LED's Wall Plug Efficiency Exceeds 100%

An LED’s power conversion (wall-plug) efficiency varies inversely with its optical output power. Wall-plug efficiency can exceed 100% at low applied voltages and high temperatures. The laws of thermodynamics were not overruled. The "extra-power is provided by vibrations in the device’s crystal lattice due to the high environmental temperature. Image credit: Santhanam, et al. ©2012 American Physical Society For the first time, researchers have demonstrated that an LED can emit more optical power than the electrical power it consumes. Although scientifically intriguing, the results won’t immediately result in ultra-efficient commercial LEDs since the demonstration works only for LEDs with very low input power that produce very small amounts of light and emits primarily in the invisible IR range of 2.4 µm. Read more »

Technology | Feb 10, 2012

IM³OLED Project to Develop Multiscale OLED Modeling Tool

IM³OLED will look into modeling tools for devices such as this flexible OLED lighting tile, developed at Holst Centre The EU-funded IM³OLED (Integrated Multidisciplinary & Multiscale Modeling for Organic Light-Emitting Diodes) project - coordinated by Holst Centre and the Russian National Research Nuclear University MEPhI - has officially been launched. An international collaboration with the Russian Federation, the project aims to develop a software tool for multiscale OLED modeling. Such a tool would help the OLED industry escape today’s “trial-and-error” development and accelerate towards the goal of 150 lumens per Watt devices. Read more »

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Edison Opto UVA + White & UVC Series Customize Design Solution

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J Series® 2835 G Class 3V LEDs Now Shine Even Brighter

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LUXEON 5050 HE Delivers Higher Efficacy in a High-power LED

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NICHIA LED Technology Presented at LICHTWOCHE München

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