Intellectual Properties

IP, Reports & Roadmaps | Apr 29, 2017
ITC Denies Epistar`s Motion to Stay Exclusion Order in Investigation Initiated by Philips Lumileds
The United States International Trade Commission (ITC) has denied Epistar`s motion to stay the ITC`s Exclusion Order barring importation of Epistar`s OMA, MB and GB LEDs. After the ITC ruled that Epistar`s current AlInGaP LEDs infringe Philips Lumileds` patent rights and issued an exclusion order banning importation of those LEDs, Epistar filed motions before both the ITC and the U.S. Court of Appeals for the Federal Circuit to stay enforcement of the exclusion order. The ITC has denied Epistar`s motion. Read more »
IP, Reports & Roadmaps | Apr 29, 2017
ITC adopts initial determination of infringement by Epistar’s MB LEDs and agrees to consider whether OMA and GB LEDs infringe as well
San Jose, CA — Administrative Law Judge (“ALJ”) Sydney Harris’ recommendation last month for the exclusion of Epistar’s metal bond (“MB”) products will stand according to a new, favorable ruling issued by the United States International Trade Commission (“ITC”) this week in Philips Lumileds’ patent infringement case against Epistar. Read more »
IP, Reports & Roadmaps | Apr 29, 2017
Intematix Awarded Sixth Patent for Remote Phosphor LED Lighting Designs
Intematix Corporation, a leading innovator of patented phosphor materials and components for high-quality LED lighting, has been awarded a sixth remote phosphor patent by the U.S. Patent and Trademark Office. Intematix’s new patent will help designers develop a new generation of high-efficiency LED lighting fixtures. This latest patent marks the fourth remote phosphor patent Intematix has received this year. The company, which is a leader in the commercialization of remote phosphor technology, has another 85 remote phosphor patents pending worldwide in addition to the six issued U.S. patents. Read more »
IP, Reports & Roadmaps | Apr 29, 2017
Intematix and Tridonic Consortium Announce Agreement on BOSE Phosphor Patents for LEDs
Intematix, a leading U.S. manufacturer of LED phosphors, and Tridonic, a leading manufacturer of lighting components and part of the Zumtobel Group of Austria, today announced a comprehensive licensing agreement governing silicate patents for LEDs. The patents control the use of LED phosphor materials and the application of the phosphors in LEDs. The BOSE patents are held by a consortium of four companies: Tridonic, Toyoda Gosei, Leuchtstoffwerk Breitungen and Litec GbR. Read more »
IP, Reports & Roadmaps | Apr 29, 2017
Intematix Adds Latest Phosphor Patent Award to Growing IP Portfolio
Intematix Corp. a leading innovator of advanced materials solutions and provider of patent-backed merchant phosphor products for solid state lighting applications, today announced the addition of US Patent Number 7,311,858 for silicate based yellow-green phosphors to its growing intellectual property portfolio. Yellow-green phosphors are typically combined with a blue LED emitter to produce energy efficient solid state white lighting in a growing variety of applications. Read more »
IP, Reports & Roadmaps | Apr 29, 2017
Intelligent drive circuit for a light emitting diode (LED) light engine
Intelligent drive circuit for a light emitting diode (LED) light engine A controller for controlling a light emitting diode (LED) light engine. The controller includes a temperature sensor configured to sensor temperature at the LED light engine. A current sensor senses a drive current of the LED light engine. A voltage differential sensor senses a voltage differential across LEDs of the LED light engine. A timer monitors a time of operation of the LED light engine. Further, a control device controls the drive current to the LED light engine based on the sensed temperature, the sensed drive current, the sensed voltage differential, and the monitored time of operation. Further, the control device outputs an indication of intensity degradation of an LED, and if the intensity degradation exceeds a predetermined threshold the control can output an indication of such to a user, so that the user can be apprised that the LED needs to be changed. Read more »
IP, Reports & Roadmaps | Apr 29, 2017
Integrating chamber cone light using LED sources
Integrating chamber cone light using LED sources A system to provide radiant energy of selectable spectral characteristic (e.g. a selectable color combination) uses an integrating cavity to combine energy of different wavelengths from different sources. The cavity has a diffusely reflective interior surface and an aperture for allowing emission of combined radiant energy. Sources of radiant energy of different wavelengths, typically different-color LEDs, supply radiant energy into the interior of the integrating cavity. In the examples, the points of entry of the energy into the cavity typically are located so that they are not directly visible through the aperture. The cavity effectively integrates the energy of different wavelengths, so that the combined radiant energy emitted through the aperture includes the radiant energy of the various wavelengths. The apparatus also includes a control circuit coupled to the sources for establishing output intensity of radiant energy of each of the sources. Control of the intensity of emission of the sources sets the amount of each wavelength of energy in the combined output and thus determines a spectral characteristic of the radiant energy output through the aperture. Read more »
IP, Reports & Roadmaps | Apr 29, 2017
Integrated led chip to emit multiple colors and method of manufacturing the same
Integrated led chip to emit multiple colors and method of manufacturing the same The present invention is a monolithic, multi-colored LED chip and a method for making the same. The LED chip is comprised of a substrate and a plurality of light emitting structures, each light emitting structure capable of emitting a wavelength of light unique compared to others and each structure layered on top of another structure and separated by a dielectric layer. The light emitting structures are then capable of independent or tandem activation, yielding the original colors of each section, blends of colors, and white light. The method starts with the base for such a chip and etches layers of the chip away, leaving exposed sections, to reach electrical contact layers for each light emitting structure. Electrically conductive material is then used to fill the exposed sections and is, in turn, etched away to leave contacts. An insulating material is then used to fill in the resultant areas. Read more »
IP, Reports & Roadmaps | Apr 29, 2017
Higher Regional Court Karlsruhe Confirms OSRAM Patents
The higher regional court Karlsruhe confirmed that Malaysian LED manufacturer Dominant is illegally using or has used OSRAM AG technology with seven patents. As the court of first instance, the regional court Mannheim already reached the same verdict regarding three of these patents on July 25, 2007. OSRAM had sued the manu-facturer on several patents and industrial properties. “The ruling of the court of appeal in Karlsruhe is an important confirmation of our intellectual property rights”, said Aldo Kamper, CEO of OSRAM Opto Semiconductors. Read more »
IP, Reports & Roadmaps | Apr 29, 2017
High output light emitting diode and method for fabricating the same
High output light emitting diode and method for fabricating the same A high output light emitting diode (LED) and a method for fabricating the LED is disclosed. The LED includes a sidewall or surface that is inclined. A reflective film is formed on the inclined sidewall or surface to allow light to reflect from the reflective film and to emit the light upward or in a favorable direction with respect to the device, thereby being configured and enabled to improve a light output of the LED and dispense with an additional passivation process. Read more »
IP, Reports & Roadmaps | Apr 29, 2017
High efficiency light emitting diode (LED) with optimized photonic crystal extractor
High efficiency light emitting diode (LED) with optimized photonic crystal extractor A high efficiency, and possibly highly directional, light emitting diode (LED) with an optimized photonic crystal extractor. The LED is comprised of a substrate, a buffer layer grown on the substrate (if needed), an active layer including emitting species, one or more optical confinement layers that tailor the structure of the guided modes in the LED, and one or more diffraction gratings, wherein the diffraction gratings are two-dimensional photonic crystal extractors. The substrate may be removed and metal layers may be deposited on the buffer layer, photonic crystal and active layer, wherein the metal layers may function as a mirror, an electrical contact, and/or an efficient diffraction grating. Read more »
Resources | Intellectual Properties | Reports | GaN-on-Si | Apr 29, 2017
GaN-on-Silicon Substrate Patent Investigation - Knowmade & Yole See More Players on the Playground
GaN-on-Silicon Substrate Patent Investigation - Knowmade & Yole See More Players on the Playground GaN-on-Si technology appeared naturally as an alternative to GaN-on-Sapphire—the main stream technology for LED applications. Today, despite potential cost benefits, the mass adoption of GaN-on-Si technology for LED applications remains unclear. Most major LED makers have a patenting activity related to GaN-on-Si technology, but so far, few have made it the core of their strategy and technology roadmap. Contrary to the LED industry, we expect GaN-on-Si to be widely adopted by Power Electronics and RF applications because of its lower cost and CMOS compatibility. Read more »
Resources | Intellectual Properties | Optics | Apr 29, 2017
Fraen Color-Mixing Zoom System Patent for LED Lighting Issued by USPTO
Fraen Color-Mixing Zoom System Patent for LED Lighting Issued by USPTO Fraen is pleased to announce that the U.S. Patent and Trademark Office recently issued a patent on the cornerstone product of Fraen’s entertainment lighting optics portfolio. Patent number 9,411,083 was granted on August 9, 2016, and covers Fraen’s system for colormixing zoom LED lighting optics. Read more »
IP, Reports & Roadmaps | Apr 29, 2017
Flip-chip light emitting diode with high light-emitting efficiency
Flip-chip light emitting diode with high light-emitting efficiency A flip-chip light emitting diode with high light-emitting efficiency is disclosed. The LED includes a transparent conductive layer, an oxide layer, a reflective metal layer, a conductive layer, and a protective diffusion layer sequentially disposed over a p-type semiconductor layer. Thereby, light emitting from a light-emitting layer toward the p-type semiconductor layer is reflected and penetrating a transparent substrate and emitting outwards. Thus the problem of light shielded from the flip-chip type LED is solved and the light-emitting efficiency is improved. Furthermore, the present invention disposes the LED chip in a face-down orientation on a conductive substrate by flip-chip technology so as to enhance heat-dissipation efficiency of the LED. Read more »
IP, Reports & Roadmaps | Apr 29, 2017
External extraction light emitting diode based upon crystallographic faceted surfaces
External extraction light emitting diode based upon crystallographic faceted surfaces A light emitting diode is disclosed that includes a support structure and a Group III nitride light emitting active structure mesa on the support structure. The mesa has its sidewalls along an indexed crystal plane of the Group III nitride. A method of forming the diode is also disclosed that includes the steps of removing a substrate from a Group III nitride light emitting structure that includes a sub-mount structure on the Group III nitride light emitting structure opposite the substrate, and thereafter etching the surface of the Group III nitride from which the substrate has been removed with an anisotropic etch to develop crystal facets on the surface in which the facets are along an index plane of the Group III nitride. The method can also include etching the light emitting structure with an anisotropic etch to form a mesa with edges along an index plane of the Group III nitride. Read more »
IP, Reports & Roadmaps | Apr 29, 2017
Evident Technologies Announces Issuance of Key Patent for Semiconductor Nanocrystal Synthesis
Evident Technologies, Inc. today announced the issuance of US Patent No. 7,482,059 covering the ability to synthesize a semiconductor nanocrystal structure with a metal layer which dramatically enhances the brightness and stability of the semiconductor nanocrystal complex. This newly issued patent represents another major advance of semiconductor materials science and further enhances the breadth of the company's expansive intellectual property portfolio. Read more »
News-Spot | IP, Reports & Roadmaps | Apr 29, 2017
Everlight Files Patent Infringement Suit against Nichia in US Court
Everlight Electronics Co., Ltd. today filed a patent infringement lawsuit against Nichia Corp. in the United States District Court for the Eastern District of Michigan. The lawsuit seeks to enjoin Nichia from manufacturing, using, importing, offering for sale, or selling its infringing products in the United States It also seeks monetary damages. Read more »
News-Spot | IP, Reports & Roadmaps | Apr 29, 2017
Everlight Fights Back Against Nichia in LED Patent Battle
After Everlight won a victory over Nichia for the patent administrative litigation (Patent No. 089036) in the Taiwan Supreme Administrative Court in October 2011, the Taiwan Supreme Court this November ruled in favor of Everlight again in the civil infringement case on Nichia’s patent in issue, which finalizes all cases regarding this patent. Furthermore, facing the situation that Nichia has affected fair competitive market mechanisms by filing patent infringement lawsuits and announcing press releases, Everlight decided to fight back. Today (12/1), Everlight brought a lawsuit in the Tokyo District Court demanding that Nichia stop spreading false allegations and seeking an award of damages. Read more »
Resources | Intellectual Properties | LEDs | Material Science | Apr 29, 2017
Epistar’s Patent Portfolio Reaches New Milestone of 1,000 Granted Patents
As a world-leading company in LED chip technology, Epistar Corporation was granted its 1000th patent recently. This number will continue to grow as there are about another 1,000 applications pending worldwide. Since its establishment in 1996, Epistar has firmly believed that technology innovation is the foundation for being a leader in the industry, and that acquisition and strategic deployment of intellectual property rights, such as patents, is a key to success. Read more »
IP, Reports & Roadmaps | Apr 29, 2017
Epistar licenses unique LED technology from ITRI
Taipei, Epistar Corp., a leading Taiwanese supplier of light emitting diode (LED) chips, has recently licensed a unique technology for boosting LED lumen from the government-backed Industrial Technology Research Institute (ITRI), making its patent deployment more complete. Read more »
Resources | Intellectual Properties | Reports | Light Conversion | Apr 29, 2017
Effects of Expiring Phosphors and QD IP on the LED Applications Patent Landscape
Effects of Expiring Phosphors and QD IP on the LED Applications Patent Landscape The latest Yoel report on will especially concentrate on the question how IP forces will evolve, with fundamental patent expiring in the next years? The report provides a detailed picture of the patent landscape for LED downconverters, namely Phosphors & Quantum Dots (QD). It covers patents published worldwide up to September 2015. More than 7,510 patent families relevant to the scope of this report have been selected. Read more »
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