LEDs & OLEDs
Technology |
Jul 29, 2010
Japanese scientists have proposed a solution to the puzzle of why blue light-emitting diodes are so bright
Despite huge commercial success, until now the reason for the unusual brightness has not been known. The material they are made from - indium gallium nitride - can only be fabricated to such a poor quality that it would not be expected to emit much light.
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Technology |
Jul 29, 2010
Rensselaer researchers aim to close 'green gap' in LED technology
Troy, N.Y. - A team of researchers from Rensselaer Polytechnic Institute has received $1.8 million in federal funding to improve the energy efficiency of green light-emitting diodes (LEDs).
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Technology |
Jul 29, 2010
Novel Nano-Etched Cavity Makes LEDs 7 Times Brighter
Researchers at the National Institute of Standards and Technology (NIST) have made semiconductor light-emitting diodes (LEDs) more than seven times brighter by etching nanoscale grooves in a surrounding cavity to guide scattered light in one direction.
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Technology |
Jul 29, 2010
Paint-on semiconductor outperforms chips
Researchers at the University of Toronto have created a semiconductor device that outperforms today's conventional chips -- and they made it simply by painting a liquid onto a piece of glass.
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Technology |
Jul 29, 2010
Photonics crystals improve LED efficiency
A 50% increase in efficiency is a significant stride toward being viable sources for solid-state lighting.
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Technology |
Jul 29, 2010
Aluminum Nitride Light Emitting Diodes with the Shortest Wavelength towards Dioxin, PCB Decomposition Technology
Nippon Telegraph and Telephone Corporation (NTT) has observed light of 210-nm wavelength from aluminum nitride (AlN) light emitting diodes (LED).
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Technology |
Jul 29, 2010
Method May Help Optimize Light-emitting Semiconductors
Physicists at JILA have demonstrated an ultrafast laser technique for "seeing" once-hidden electronic behavior in semiconductors, which eventually could be useful in more predictable design of optoelectronic devices, including semiconductor lasers and white light-emitting diodes.
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Technology |
Sep 08, 2010
Philips Demonstrates World’s First Mains-Powered White-Light OLED Module
Scientists from Philips Research have developed the first-ever organic light emitting diode (OLED) module that can be powered directly from a mains electricity supply. The prototype opens the door to OLED systems that can be directly plugged into standard power outlets without the need for bulky power management circuitry. This will reduce the bill of materials and simplify luminaire design for future OLED-based systems aimed at mass-market general illumination applications.
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Technology |
Oct 04, 2010
Using Nanostructures to Improve LED Light Emission
Application of nanosphere lithography to create uniform surface roughness on an optical device sample promotes light extraction and collection efficiency. In recent years, nanopattern definition has become a subject of extensive exploration owing to its ability to improve device performance in electronics and optoelectronics. The literature proposes a variety of techniques, including electron-beam lithography, which gives uniform nanopatterns but is expensive, and self-assembled metal nanomasks, which scatter nonuniformly on the sample. As an alternative, we have developed a technology called nanosphere lithography that creates nanopatterns by spin-coating a monolayer of nanospheres on top of the device surface. We have used the technology to fabricate nanopatterns on gallium nitride (GaN)-based LEDs to improve light extraction and collection efficiency.
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Technology |
Oct 15, 2010
Epistar Red-Orange LED Chips Set Efficacy Record in the Lab
Epistar announces today the successful development of a new generation of Aquarius-series AlGaInP LEDs emitting at an efficacy 26 percent higher than the previously announced Mar. 15, 2010 record.
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Technology |
Oct 22, 2010
GE Scientists Employ Jet Engine Cooling Technology in Prototype LED Bulb
A 1,500-lumen prototype produces as much light as a 100-watt halogen bulb, using 1/3 the energy. GE’s patented “dual cool jets” technology solves thermal challenges, enables lamp design that is half the size and weight of a 600-lumen LED downlight available today.
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Products, Materials + Tools |
Nov 15, 2010
Epistar Enables Amazing 162 Lm/W White HV-LED for Lighting Applications
As the LED's brightest link, Epistar today unveiled its breakthrough of High-Voltage (HV) chip that enable the cold white LED to reach 162 lm/W.
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Technology |
Nov 15, 2010
NeoPac Unveiled 8 inches Wafer Level PackagingTechnology for LEDs Illumination
NeoPac Opto, Inc. a Taiwan based technology-driven LEDs lighting company recently announced its newly developed technology on 8 inches silicon-based wafer level package (WLP) for LEDs illumination, which is derived from its patented NeoPac Universal Platform (NUP) and LEDs Standard Light Sources.
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Products, Materials + Tools |
Nov 19, 2010
Honeycomb™ LED Chip from Verticle Inc.
Verticle, Inc (www.verticleinc.com) of Dublin, California has announced the world's first hexagonal LED chip. Honeycomb™ LED Chip, named after its hexagonal shape, is a vertically structured LED chip developed especially for high power LED applications. It is expected to bring a higher chip count per wafer and better optical power over conventional square or rectangular type LEDs, said Dr. Mike (M.C.) Yoo, Company CEO.
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Technology |
Dec 22, 2010
Quantum Dots Are Not Dots
Researchers from the Quantum Photonics Group at DTU Fotonik in collaboration with the Niels Bohr Institute, University of Copenhagen surprise the scientific world with the discovery that light emission from solid-state photon emitters, the so-called quantum dots, is fundamentally different than hitherto believed. The new insight may find important applications as a way to improve efficiency of quantum information devices. Their findings are published on December 19th 2010 in the prestigious journal Nature Physics.
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Technology |
Jan 14, 2011
Epistar Improves Efficacy of Warm-white Light to 170 lm/W with Advanced High-voltage LED Technologies
Epistar R & D Center have successfully developed several technologies including the new transparent substrate transfer process, the fine structure for increasing photon extraction efficiency and the improvement on the current spreading uniformity. Based on these technologies, the red LED chip with efficacy of 174 lm/W at Wd of 610 nm is realized.
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Technology |
Jan 26, 2011
Voiding Defects: New Technique Makes LED Lighting More Efficient
Light-emitting diodes (LEDs) are an increasingly popular technology for use in energy-efficient lighting. Researchers from North Carolina State University have now developed a new technique that reduces defects in the gallium nitride (GaN) films used to create LEDs, making them more efficient.
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Technology |
Feb 15, 2011
Jewel-Toned Organic Phosphorescent Crystals: A New Class of Light-Emitting Material
University of Michigan researcher Jinsang Kim and his colleagues have developed a new class of material that shines with phosphorescence—a property that has previously been seen only in non-organic compounds or organometallics. This pure organic compounds that glow in jewel tones could potentially lead to cheaper, more efficient and flexible display screens, among other applications.
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Technology |
Mar 09, 2011
BRIDGELUX Demonstrates Dramatic Advancements in GaN-on-Silicon Technology for Solid State Lighting
Bridgelux Inc., a leading developer and manufacturer of LED lighting technologies and solutions, announced today that it has achieved a major breakthrough with the demonstration of 135 Lumens per Watt GaN-on-Silicon based LED Technology. This represents the industry’s first commercial grade performance for a Silicon-based LED.
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Technology |
Mar 16, 2011
From the OSRAM Laboratory: Efficiency Record for Warm White
OSRAM Opto Semiconductors has set a new laboratory record of 142 lm/W for the efficiency of a warm white LED light source. With a correlated color temperature (CCT) of 2755 K the LED achieves a good color rendering index (CRI) of 81. Measurements were taken under standard conditions: room temperature and pulsed mode at an operating current density of 350 mA/mm².
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